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STGW25H120F2

Part No STGW25H120F2
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT H-SERIES 1200V 25A TO-247 / Low thermal resistance
Sample
Rohs State rohs
ECAD Module
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Manufacturer STMicroelectronics
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 50A
Current - Collector Pulsed (Icm) 100A
Vce(on) (Maximum) at Vge, Ic 2.6V at 15V, 25A
Power - Max 375W
Switching Energy 600μJ (on), 700μJ (off)
Input Type Standard
Gate Charge 100nC
Td (on/off) at 25°C 29ns/130ns
Test Condition 600V, 25A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247
Part Number Series STGW25
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 814433-STGW25H120F2
Ultra Librarian 3D Model Ultra Librarian STGW25H120F2 CAD Model

Description

STGW25H120F2 - IGBT from STMicroelectronics

The STGW25H120F2 is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics, a leader in semiconductor solutions. This device is designed to cater to a wide range of high-efficiency applications, particularly those requiring fast switching and robust thermal performance. With its advanced features and capabilities, the STGW25H120F2 is an ideal choice for power conversion systems in industrial, automotive, and consumer markets.

Key Features

  • Voltage Rating: The STGW25H120F2 is rated for a collector-emitter voltage of 1200V, making it suitable for high voltage applications.
  • Current Capacity: This IGBT can handle a continuous collector current of up to 40A at 25°C, ensuring reliable operation in demanding situations.
  • Low On-State Voltage Drop: With a low VCE(sat) of 2.3V(typ.), it minimizes conduction losses and enhances efficiency.
  • High-Speed Switching: The device boasts a maximum switching frequency, facilitating high-efficiency power conversion in fast-switching applications.
  • Short-Circuit Rating: It offers a short-circuit withstand time of 10μs, providing robustness and reliability under fault conditions.
  • Co-Packaged Diode: The IGBT comes with a soft recovery anti-parallel diode, optimized for minimal recovery time and reduced electromagnetic interference (EMI).

Applications

  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • Motor Drives and Inverters
  • Induction Heating Systems
  • Welding Equipment

The STGW25H120F2 is built using STMicroelectronics' advanced trench gate field-stop technology, which ensures superior performance in terms of switching efficiency and thermal management. The device's package is engineered to offer excellent heat dissipation, further enhancing its reliability and lifespan. Its robust design ensures that it can withstand the harsh conditions often encountered in industrial environments.

Whether you're designing an energy-efficient motor drive or a compact power supply unit, the STGW25H120F2 from STMicroelectronics offers the performance, efficiency, and reliability needed to meet the demands of modern power electronics. With its combination of high voltage capability, fast switching, and low conduction losses, this IGBT is a high-performance solution that can drive your applications to new levels of excellence.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.3765 $63.7650
23+ $5.2321 $120.3383
35+ $5.0686 $177.4010
48+ $4.9051 $235.4448
61+ $4.7417 $289.2437
82+ $4.2511 $348.5902
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Availability: 22,300 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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