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Same model may have multiple batches, images only for reference.
APT102GA60B2 Real Image
Same model may have multiple batches, images only for reference.

APT102GA60B2

Part No APT102GA60B2
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description High Speed PT IGBT
Datasheet
APT102GA60B2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS 8
Packaging Tube
Part Status Obsolete(EOL)
IGBT Type PT
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 183A
Current - Collector Pulsed (Icm) 307A
Vce(on) (Maximum) @ Vge, Ic 2.5V @ 15V, 62A
Power - Max 780W
Switching Energy 1.354mJ (on), 1.614mJ (off)
Input Type Standard
Gate Charge 294nC
Td (on/off) @ 25°C 28ns/212ns
Test Condition 400V, 62A, 4.7 Ohm, 15V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3 Variant
Win Source Part Number 1146587-APT102GA60B2
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name APT102GA60B2
Introduction Date April 30, 2008
ECCN EAR99
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian APT102GA60B2 CAD Model

Description

The 1146587-APT102GA60B2 is an obsolete (EOL) product belonging to the discrete semiconductor products category.

  • Product: 1146587-APT102GA60B2
  • Manufacturer: Microsemi Corporation
  • Status: Obsolete (EOL)
  • Category: Discrete Semiconductor Products
  • Supply and Demand Status: Limited
  • Series: POWER MOS 8
  • Type: IGBT
  • Maximum Power: 780W
  • Mounting Style: Through-hole
  • Operating Temperature Range: -55°C ~ 150°C (TJ)

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