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STGW19NC60WD

Part No STGW19NC60WD
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 600V 42A 125W TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 42A
Collector-emitter saturation voltage(Max) 2.5V @ 15V, 12A
Maximum Power Dissipation 125W
Total Switching Energy(Ets) 81μJ (on), 125μJ (off)
Input Type Standard
Gate Charge 53nC
Turn-on and Turn-off delay time 25ns/90ns
Testing Conditions 390V, 12A, 10 Ohm, 15V
Reverse Recovery Time (trr) 31ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Win Source Part Number 1103048-STGW19NC60WD
Popularity Medium
Supply and Demand Status Balance
Quantity per package 30
Ultra Librarian 3D Model Ultra Librarian STGW19NC60WD CAD Model

Description

The STGW19NC60WD is a high-performance Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. This power semiconductor device combines the simple gate-drive characteristics of a MOSFET with the high-current and low-saturation-voltage capability of a bipolar transistor. It is designed for a wide range of high-power switching applications, providing an efficient and reliable solution for designers.

Key Features

  • Voltage Rating: The device is rated for a collector-emitter voltage of 600V, making it suitable for high-voltage applications.
  • Current Capability: With a continuous collector current rating of 19A, and a pulsed collector current of 76A, this IGBT can handle significant power levels.
  • Low On-Voltage Drop (Vce(on)): The STGW19NC60WD exhibits a low on-voltage drop, which enhances its efficiency by minimizing conduction losses.
  • High-Speed Switching: It offers fast switching speeds, which is essential for reducing switching losses and improving performance in applications such as inverters and converters.
  • Co-Packaged Diode: The device includes a co-packaged fast recovery diode, providing additional protection against reverse voltage transients and reducing component count in circuit designs.

Applications

This IGBT is ideal for a diverse range of applications, including:

  • Motor drives and controllers
  • Uninterruptible power supplies (UPS)
  • Power factor correction circuits
  • Induction heating
  • High-frequency converters
  • Welding equipment

Reliability and Quality

STMicroelectronics is known for its commitment to quality and reliability. The STGW19NC60WD is built to meet the high standards expected from a leading semiconductor manufacturer, ensuring stable performance and longevity in demanding conditions. It is packaged in a TO-247 package, which is widely used for high-power devices due to its ability to handle high thermal and electrical loads.

Environmental Compliance

The STGW19NC60WD complies with various environmental regulations, including RoHS and REACH, reflecting STMicroelectronics' dedication to environmental sustainability and the reduction of hazardous substances in electronic components.

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.7280 $60.0160
52+ $2.2384 $116.3968
80+ $2.1686 $173.4880
111+ $2.0986 $232.9446
143+ $2.0286 $290.0898
191+ $1.8187 $347.3717
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,053 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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