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STGB20NB37LZ

Part No STGB20NB37LZ
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 425V 40A 200W D2PAK  /  IGBT 425 V 40 A 200 W Surface Mount D2PAK
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series PowerMESH™
Package Tube
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 425 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 80 A
Vce(on) (Max) @ Vge, Ic 2V @ 4.5V, 20A
Power - Max 200 W
Switching Energy 11.8mJ (off)
Input Type Standard
Gate Charge 51 nC
Td (on/off) @ 25°C 2.3µs/2µs
Test Condition 250V, 20A, 1kOhm, 4.5V
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Base Product Number STGB20
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1096880-STGB20NB37LZ
Ultra Librarian 3D Model Ultra Librarian STGB20NB37LZ CAD Model

Description

STGB20NB37LZ - IGBT Transistor from STMicroelectronics

The STGB20NB37LZ is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by STMicroelectronics, a global semiconductor leader known for its cutting-edge technology. This IGBT is part of ST's STPOWER family and is specifically engineered to deliver high efficiency and fast switching in a wide range of power applications.

Key Features

  • High Current Capability: The STGB20NB37LZ can handle a continuous collector current of up to 40A, making it suitable for high-power applications.
  • Low On-Voltage: It offers a very low collector-emitter saturation voltage of typically 1.85V, which translates to reduced conduction losses and improved overall efficiency.
  • High Switching Speed: The device is designed for fast switching, with a tight parameter distribution and a high ruggedness capability, ensuring reliability even under stressful conditions.
  • Co-Packaged Free-Wheeling Diode: The IGBT comes with an integrated fast recovery diode, which provides protection against reverse voltage and reduces the number of components required in a circuit.

Applications

The STGB20NB37LZ is ideal for a diverse range of high-efficiency applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • Motor Drives
  • Power Factor Correction Circuits
  • Inductive Heating
  • Welding Equipment

Reliability and Performance

STMicroelectronics ensures that the STGB20NB37LZ meets the highest quality and performance standards. The device undergoes rigorous testing and validation to guarantee optimal performance and reliability in the field. With its robust design and advanced features, the STGB20NB37LZ is an excellent choice for designers looking to enhance efficiency and longevity in their power management systems.

Summary

Overall, the STGB20NB37LZ from STMicroelectronics represents a blend of high-performance, efficiency, and reliability. Its advanced features make it a compelling choice for engineers and designers working on the next generation of power electronic systems. With ST's commitment to quality, this IGBT is set to be a cornerstone component in a multitude of power applications.

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