The STGB18N40LZT4 is a high-performance N-channel power MOSFET manufactured by STMicroelectronics, designed for a wide range of applications that require efficient power conversion and switching. This device is part of the STMicroelectronics' STripFET™ series, which is known for its low on-state resistance and high switching performance.

Key Features

• Breakdown Voltage: The STGB18N40LZT4 boasts a robust 400V drain-source breakdown voltage, making it suitable for high-voltage applications.
• Low On-Resistance: With a typical R_DS(on) of just 0.165Ω, this MOSFET ensures high efficiency and reduced conduction losses.
• Current Capacity: It can handle continuous drain currents up to 18A, allowing for high current operations.
• Fast Switching Speed: The device's fast switching speed enhances performance in high-frequency circuits.
• Gate Charge: Optimized gate charge (Qg) minimizes switching losses without compromising on the ease of drive.
• Temperature Performance: The MOSFET operates over a wide temperature range, with a maximum junction temperature of 150°C, ensuring reliability in various environments.
• Package: Housed in a D²PAK package, the STGB18N40LZT4 offers a compact footprint and excellent thermal performance.

Applications

The STGB18N40LZT4 is versatile and can be used in a variety of applications, including:

• Switch Mode Power Supplies (SMPS)
• LED Lighting
• High-Efficiency DC-DC Converters
• Motor Control
• Power Management Functions
• Automotive Applications

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The STGB18N40LZT4 is designed and manufactured to meet the stringent requirements of the industrial and automotive markets, ensuring both reliability and performance. With its robust design and proven technology, the STGB18N40LZT4 is a solid choice for designers looking for a MOSFET that can deliver efficiency and durability.