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STGB14NC60KDT4

Part No STGB14NC60KDT4
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 600V 25A 80W D2PAK / N-CHANNEL 14A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH IGBT
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer STMicroelectronics
Packaging Reel
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 25A
Current - Collector Pulsed (Icm) 50A
Vce(on) (Maximum) at Vge, Ic 2.5V at 15V, 7A
Power - Max 80W
Switching Energy 82μJ (on), 155μJ (off)
Input Type Standard
Gate Charge 34.4nC
Td (on/off) at 25°C 22.5ns/116ns
Test Condition 390V, 7A, 10Ohm, 15V
Reverse Recovery Time (trr) 37ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Part Number Series STGB14
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 803134-STGB14NC60KDT4
Ultra Librarian 3D Model Ultra Librarian STGB14NC60KDT4 CAD Model

Description

STGB14NC60KDT4 - High Performance IGBT by STMicroelectronics

The STGB14NC60KDT4 is a cutting-edge insulated gate bipolar transistor (IGBT) developed by STMicroelectronics, a global leader in semiconductor solutions. This IGBT is designed to cater to a wide range of high-efficiency applications, particularly in the field of power management and conversion. It is well-suited for use in motor drives, uninterruptible power supplies (UPS), induction heating, and a variety of other high-performance power applications.

With its robust design and advanced technology, the STGB14NC60KDT4 offers an optimal trade-off between switching performance and on-state behavior, which is critical for high-efficiency power management. The device is characterized by a low on-voltage drop (Vce(sat)) and a minimized collector-emitter saturation voltage, which translates to reduced conduction losses.

The IGBT operates at a maximum junction temperature of 175°C, providing a wide safety margin for thermal management and ensuring reliability even under strenuous conditions. It also features a high current capability, with a continuous collector current (Ic) rating of 14A at 25°C, and a pulsed collector current (Icm) rating of 56A, making it suitable for high-power applications.

One of the key attributes of the STGB14NC60KDT4 is its fast switching speed, which is essential for reducing switching losses and improving overall system efficiency. Furthermore, the device includes an integrated fast recovery diode, which is optimized for the high-speed switching inherent in modern power electronic circuits. This integrated diode helps to minimize the reverse recovery time (trr) and reduce the associated energy losses.

The STGB14NC60KDT4 comes in a TO-263 (D2PAK) package, which is known for its excellent thermal performance and compact footprint. This packaging makes it easy to integrate into various circuit designs without compromising on power density or thermal management.

In summary, the STGB14NC60KDT4 from STMicroelectronics represents a state-of-the-art IGBT solution that combines high efficiency, reliability, and performance, making it an ideal choice for designers and engineers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9061 $57.1830
65+ $1.5640 $101.6600
100+ $1.5151 $151.5100
140+ $1.4662 $205.2680
180+ $1.4173 $255.1140
240+ $1.2707 $304.9680
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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