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STFI13N60M2

Part No STFI13N60M2
Manufacturer STMicroelectronics
Catalog FETs - Single
Description Low gate input resistance | MOSFET N-CH 600V I2PAK-FP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 11A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 380mOhm at 5.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 17nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 580pF at 100V
Power Dissipation (Maximum) 25W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package I2PAKFP (TO-281)
Manufacturer Package TO-262-3 Full Pack, I2Pak
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1260987-STFI13N60M2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STFI13N60M2 CAD Model

Description

The STFI13N60M2 is a cutting-edge power MOSFET brought to you by STMicroelectronics, designed to meet the needs of modern electronic applications requiring high efficiency and power density. This N-channel MOSFET is part of the MDmesh™ M2 series, which is renowned for its excellent on-state resistance (RDS(on)) characteristics and superior switching performance.

Key Features

  • Voltage Rating: The STFI13N60M2 is rated for a drain-source voltage (VDS) of 600V, making it suitable for high-voltage applications.
  • Current Capacity: It boasts a continuous drain current (ID) of 11A, ensuring it can handle significant power without overheating.
  • Low On-Resistance: With an RDS(on) value as low as 0.280 ohms, this MOSFET offers reduced conduction losses, enhancing overall efficiency.
  • Fast Switching Speed: Fast switching is a hallmark of the STFI13N60M2, reducing switching losses and improving performance in high-frequency applications.
  • Enhanced dv/dt Capability: The device is engineered to withstand high voltage transients, ensuring reliability and longevity in harsh electrical environments.
  • 100% Avalanche Tested: Each unit is rigorously tested to guarantee safe operation under extreme conditions.

Applications

The STFI13N60M2 is versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • High-Efficiency DC/DC converters
  • Welding equipment
  • Uninterruptible Power Supplies (UPS)
  • Motor drives

Package and Quality

Encased in an I2PAK package, the STFI13N60M2 provides a robust and reliable solution for designers. Furthermore, STMicroelectronics is committed to delivering high-quality products that comply with the stringent international standards, ensuring that the STFI13N60M2 MOSFET meets the requirements of the most demanding electronic systems.

Whether you are developing power supplies, designing energy-efficient solutions, or working on industrial automation, the STFI13N60M2 from STMicroelectronics offers the performance, reliability, and quality that professionals expect.

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