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STFI11N65M2

Part No STFI11N65M2
Manufacturer STMicroelectronics
Catalog FETs - Single
Description Extremely low gate charge | MOSFET N-CH 650V 7A I2PAKFP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 650V
Id - Continuous Drain Current 7A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 670mOhm at 3.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 12.5nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 410pF at 100V
Power Dissipation (Maximum) 25W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package I2PAKFP (TO-281)
Manufacturer Package TO-262-3 Full Pack, I2Pak
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1260986-STFI11N65M2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STFI11N65M2 CAD Model

Description

STFI11N65M2 - Power MOSFET from STMicroelectronics

The STFI11N65M2 is a high-performance Power MOSFET brought to you by STMicroelectronics, a global semiconductor leader known for its innovative and reliable products. This MOSFET is part of ST's MDmesh™ M2 series, which is renowned for its excellent energy efficiency and high power density. The STFI11N65M2 is designed to meet the rigorous demands of modern electronic applications, making it an ideal choice for a wide range of power conversion systems.

Key Features

  • High Voltage Capability: The STFI11N65M2 operates at a drain-source voltage (VDS) of 650V, which is suitable for high-voltage applications.
  • Low On-Resistance: With an on-resistance (RDS(on)) of only 0.28 ohms, this MOSFET ensures minimal power loss and improved efficiency in your circuits.
  • Fast Switching Performance: The device boasts a fast switching speed, which is critical for reducing switching losses and improving the performance of power converters.
  • Enhanced Power Handling: Thanks to its advanced MDmesh™ M2 technology, the STFI11N65M2 is capable of handling high levels of power without compromising on performance.
  • Reduced Gate Charge: A low gate charge (Qg) reduces the power required to switch the device, thus saving energy and extending the life of the product.

Applications

The STFI11N65M2 is extremely versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • High-Efficiency DC/DC Converters
  • Welding Equipment
  • Uninterruptible Power Supplies (UPS)
  • Solar Inverters
  • Electric Vehicle Charging Stations

Package and Quality

This MOSFET is available in an I2PAK package, which provides an optimal balance between a compact form factor and thermal performance. STMicroelectronics ensures that each STFI11N65M2 device meets the highest quality standards, offering reliability and durability for your most critical applications.

With the STFI11N65M2, you are choosing a product that stands for efficiency, robustness, and high performance, backed by STMicroelectronics' commitment to excellence in the field of power semiconductor technology.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6333 $65.3320
90+ $1.3402 $120.6180
135+ $1.2984 $175.2840
185+ $1.2564 $232.4340
240+ $1.2146 $291.5040
320+ $1.0889 $348.4480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,600 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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