STF21NM60N - N-channel 600 V, 0.19 Ohm typ., 17 A MDmesh II Plus™ Low Qg Power MOSFET

The STF21NM60N is a high-performance N-channel Power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This MOSFET is part of the MDmesh™ II Plus Low Qg series, which is renowned for its excellent efficiency and thermal performance. The STF21NM60N is particularly well-suited for high-efficiency applications such as switch-mode power supplies, lighting, welding, and other high-performance power conversion systems.

Key Features:

• High Voltage Capability: With a drain-source voltage of 600V, the STF21NM60N is capable of handling high voltage applications, making it an ideal choice for power supply units and other energy-intensive devices.
• Low On-Resistance: The device features a very low on-resistance of 0.19 Ohm typ., which enhances its efficiency by minimizing conduction losses.
• High Current Rating: This MOSFET can support a continuous drain current of 17A, allowing it to drive high current loads with ease.
• Low Gate Charge (Qg): The low gate charge improves the switching performance and reduces the switching losses, which is critical for high-frequency applications.
• 100% Avalanche Tested: Each unit is guaranteed to withstand rugged operating conditions and is tested for avalanche ruggedness, ensuring reliability in demanding applications.

Applications:

• Switch Mode Power Supplies (SMPS)
• LED Lighting
• High-Efficiency DC-DC Converters
• Welding Equipment
• Power Factor Correction (PFC) Circuits

The STF21NM60N is available in a TO-220FP package, which provides a good balance between performance and size, making it easy to integrate into a variety of designs. With its robust design and state-of-the-art MDmesh II Plus technology, the STF21NM60N is a superb choice for engineers and designers looking to improve the efficiency and reliability of their power management systems.