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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 11A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 378mOhm at 5.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 17nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 590pF at 100V
Power Dissipation (Maximum) 25W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220FP
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1260936-STF15N60M2-EP
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STF15N60M2-EP CAD Model

Description

STF15N60M2-EP - High Performance Power MOSFET by STMicroelectronics

The STF15N60M2-EP is a state-of-the-art power MOSFET offered by STMicroelectronics, designed to cater to a wide range of high-efficiency applications. This device is a part of ST's MDmesh™ M2 EP series, which is well-known for its excellent energy efficiency and high switching performance. The STF15N60M2-EP is specifically engineered to address the demanding requirements of electronic power conversion systems.

With a drain-source voltage (V<sub>DS) of 600V, the STF15N60M2-EP is capable of handling high voltage operations, making it suitable for applications such as switch mode power supplies (SMPS), lighting applications, welding equipment, solar inverters, and industrial power management systems.

The MOSFET features a low on-resistance (R<sub>DS(on)) of only 0.29Ω, which is a testament to its ability to minimize on-state losses and improve overall efficiency. This low R<sub>DS(on) is achieved through ST's advanced MDmesh™ technology that combines a vertical structure with a proprietary strip layout. The result is a device that offers reduced gate charge (Q<sub>g), lower capacitances, and minimized switching losses.

The STF15N60M2-EP also boasts a high continuous drain current (I<sub>D) of 11A at 25°C, allowing for robust current handling capabilities. This feature, in conjunction with its high avalanche ruggedness, ensures that the MOSFET can withstand tough conditions and provide reliable performance over its lifespan.

For enhanced thermal management, the STF15N60M2-EP comes in a fully molded TO-220FP package, which provides excellent heat dissipation properties. This ensures that the device can maintain stable operation even under high temperature environments.

Additional features of the STF15N60M2-EP include a fast recovery diode, which is particularly beneficial in reducing noise and electromagnetic interference (EMI) in fast-switching applications. The MOSFET is also 100% avalanche tested, guaranteeing robustness and reliability in applications that may experience unexpected voltage transients.

Overall, the STF15N60M2-EP from STMicroelectronics represents a combination of advanced semiconductor technology and design, offering power system designers a high-performance solution that meets the stringent requirements of modern electronic power conversion.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.5758 $70.9110
105+ $1.2930 $135.7650
155+ $1.2527 $194.1685
215+ $1.2123 $260.6445
280+ $1.1720 $328.1600
370+ $1.0507 $388.7590
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 9,100 pieces
MOQ: 45 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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