STD7ANM60N - N-channel 600 V, 7 A MDmesh™ M6 Power MOSFET
The STD7ANM60N is a high-performance N-channel Power MOSFET from STMicroelectronics, designed to deliver efficiency and reliability for a wide range of high-voltage applications. This Power MOSFET is a part of the MDmesh™ M6 series, which is renowned for its excellent switching performance and low on-resistance. The device is tailored for high-efficiency solutions and power management tasks, making it an ideal choice for designers looking to enhance energy savings in their designs.
With a drain-source voltage (V<sub>DS) of 600 V, the STD7ANM60N is well-suited for handling high voltage requirements. It offers a continuous drain current (I<sub>D) of 7 A, ensuring that it can manage a substantial amount of current for various applications. The Power MOSFET features an R<sub>DS(on) of just 0.65 Ω, which is an indicator of its ability to operate with minimal power losses, enhancing the overall efficiency of the system it is used in.
The device is built with STMicroelectronics' state-of-the-art MDmesh™ M6 technology, which combines a vertical structure with a proprietary strip layout to achieve low on-resistance and optimized switching behavior. This technology also helps in reducing the total gate charge (Q<sub>g), which is beneficial for applications that require high switching frequencies.
The STD7ANM60N is housed in a DPAK (TO-252) package, which is compact yet robust, allowing for efficient thermal dissipation and easy integration into various circuit designs. This package is suitable for surface mount technology (SMT), which is advantageous for modern, automated manufacturing processes.
Applications for the STD7ANM60N are diverse and can include switch-mode power supplies (SMPS), LED lighting, high-efficiency DC-DC converters, power factor correction (PFC) circuits, and other power management functions in consumer, industrial, and telecommunication sectors.
STMicroelectronics provides comprehensive technical support for the STD7ANM60N, including detailed datasheets, application notes, and simulation models. This ensures that engineers can design with confidence, knowing they have access to all the necessary tools and resources to optimize their use of this advanced Power MOSFET.
