The STD5NE10T4 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This device is part of the STripFET™ IV series, which is renowned for its low on-resistance and low gate charge, making it an excellent choice for a wide range of power management applications.
Key Features
- Low Threshold Drive: The MOSFET can be driven at lower gate voltages, making it compatible with low-voltage logic level circuits and ideal for battery-powered devices and energy-saving applications.
- High Switching Efficiency: With a low on-resistance (R<sub>DS(on)) and reduced gate charge (Q<sub>g), the device ensures high efficiency during switching, which is critical for reducing power losses in electronic circuits.
- Enhanced Thermal Performance: The STD5NE10T4 is encapsulated in a surface-mount DPAK package, which offers excellent thermal performance and is suitable for compact PCB layouts.
- Robustness: This MOSFET is designed to handle continuous drain currents up to 5A, making it robust for handling high power densities and stressful conditions.
Applications
The versatility of the STD5NE10T4 allows it to be used in a variety of applications, including:
- DC-DC converters
- Power management in portable and battery-powered devices
- Motor control circuits
- Switching regulators
- Load switches
Technical Specifications
Parameter
Value
Drain-source Voltage (V<sub>DS)
100V
Continuous Drain Current (I<sub>D)
5A
Power Dissipation (P<sub>D)
45W
On-resistance (R<sub>DS(on))
0.11Ω
Gate Charge (Q<sub>g)
8.5nC
For detailed information, refer to the STD5NE10T4 datasheet.
