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STD1HNC60T4G

Part No STD1HNC60T4G
Manufacturer STMicroelectronics
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Manufacturer STMicroelectronics
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 194316-STD1HNC60T4G
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STD1HNC60T4G CAD Model

Description

The STD1HNC60T4G is a high-performance N-channel Power MOSFET produced by the renowned semiconductor manufacturer, STMicroelectronics. This state-of-the-art component is designed to meet the rigorous demands of modern electronic circuits, providing efficient power management and switching capabilities.

Key Features

  • Low On-Resistance: The device boasts a low on-resistance, which translates to reduced conduction losses and improved overall efficiency in applications where it is used.
  • High Switching Speed: With its fast switching characteristics, the STD1HNC60T4G is ideal for high-frequency power switching applications, contributing to better performance and energy savings.
  • Enhanced Power Handling: The MOSFET is capable of handling significant power levels, making it suitable for a wide range of applications, from power supplies to motor controls.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche performance, ensuring reliability and robustness in harsh conditions.
  • Low Gate Charge: The reduced gate charge of the STD1HNC60T4G allows for efficient gate-drive performance, which is critical in applications requiring rapid switching.

Applications

The versatility of the STD1HNC60T4G makes it an excellent choice for various applications, including:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control Circuits
  • LED Lighting Systems
  • Automotive Applications
  • Power Management Functions

Technical Specifications

The STD1HNC60T4G is encapsulated in a surface-mount DPAK package, which is not only compact but also provides excellent thermal performance. Its technical specifications include a drain-source voltage (Vds) of 600V, a continuous drain current (Id) of up to 1A, and a threshold voltage (Vgs th) typically around 3V. The device also features a maximum junction temperature of 150°C, ensuring stable operation even at elevated temperatures.

Conclusion

STMicroelectronics' STD1HNC60T4G is a powerful and reliable N-channel MOSFET that offers a combination of high efficiency, fast switching, and robust performance. It is an ideal choice for designers looking to improve power management in a variety of electronic systems.

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