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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 10A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 450mOhm at 5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 31nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 850pF at 50V
Power Dissipation (Maximum) 90W
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package DPAK
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1260758-STD11NM60N
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STD11NM60N CAD Model

Description

STD11NM60N - N-channel 600 V, 0.38 Ω, 10 A MDmesh™ II Power MOSFET

The STD11NM60N is a high-performance N-channel Power MOSFET presented by STMicroelectronics, a leader in the semiconductor industry. This Power MOSFET is part of the MDmesh™ II series, which is well-known for its excellent efficiency and thermal performance. Designed to operate at 600 V, it is a perfect choice for a wide range of high-voltage applications that require efficient power conversion and switching.

With an on-resistance (R<sub>DS(on)) of just 0.38 Ω, the STD11NM60N ensures minimal power loss during operation, contributing to the overall system efficiency. This low on-resistance is achieved through STMicroelectronics' innovative MDmesh™ II technology, which combines a vertical structure with a unique proprietary diffusion process. This technology allows for high current handling capabilities, with the STD11NM60N capable of supporting continuous currents up to 10 A.

The device is housed in a robust TO-252 (DPAK) package, which is designed to offer a compact footprint while still providing excellent thermal characteristics and ease of mounting on a printed circuit board (PCB). The STD11NM60N is also characterized by its fast switching speed, which is critical in applications that demand high-frequency operation, such as switch-mode power supplies (SMPS), lighting ballasts, and converters for solar energy systems.

Furthermore, the STD11NM60N features a 100% avalanche tested design, ensuring reliability and ruggedness under harsh operating conditions. This makes it suitable for applications that may experience unexpected voltage transients. The Power MOSFET also includes Zener-protected gate, which helps to protect the device against electrostatic discharge (ESD) and enhances its ruggedness.

With its combination of high voltage capability, low on-resistance, high current capacity, and fast switching speeds, the STD11NM60N is an ideal solution for designers looking to improve power density and efficiency in their applications. STMicroelectronics' commitment to quality and performance makes the STD11NM60N a reliable and efficient component for your power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.0808 $55.4040
11+ $9.0919 $100.0109
18+ $8.8078 $158.5404
24+ $8.5237 $204.5688
31+ $8.2396 $255.4276
41+ $7.3872 $302.8752
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 3,956 pieces
MOQ: 5 pcs
Order Increment : 1 piece
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