STB80NF55L-08T4 - STMicroelectronics

The STB80NF55L-08T4 is a high-performance, N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This device is part of STMicroelectronics' STripFET™ series, which are known for their low on-state resistance (R_DS(on)) and high switching performance. The STB80NF55L-08T4 is designed to meet the stringent requirements of modern electronic applications, offering energy efficiency, reliability, and a compact form factor.

With a maximum continuous drain current of 80 A, this MOSFET can handle high current loads, making it an ideal choice for power supply and conversion systems. It has a drain-source voltage (V_DSS) of 55 V, which allows it to operate effectively in a wide range of circuit designs. The low threshold voltage ensures that the device can be driven at lower gate voltages, enhancing its application in low voltage operations.

The STB80NF55L-08T4 is housed in a D2PAK surface-mount package, which not only saves space on the PCB but also provides excellent thermal performance. This packaging, combined with the MOSFET's 100% avalanche tested design, ensures that it can withstand harsh operating conditions and provide a reliable performance over a long service life.

Key Features:

• Low threshold drive
• High current capability: 80 A
• Low on-state resistance: R_DS(on)
• Drain-source voltage: 55 V
• Exceptional dv/dt capability
• 100% avalanche tested
• Surface-mount D2PAK package for efficient PCB space utilization

Applications for the STB80NF55L-08T4 MOSFET include high-efficiency switching for power supply units, DC-DC converters, motor drives, and other power management tasks where performance and energy efficiency are critical. Its robustness and reliability also make it suitable for automotive and industrial environments, where electronic components are subjected to tough conditions.

STMicroelectronics' commitment to innovation and quality ensures that the STB80NF55L-08T4 MOSFET is a component that engineers can rely on to deliver performance and durability in their electronic designs.