The STB34NM60N is a high-performance N-channel Power MOSFET from STMicroelectronics, designed to deliver efficiency and reliability for a variety of applications. This device is part of the MDmesh™ II Plus™ series which incorporates an innovative proprietary vertical structure, ensuring optimal performance in high voltage operations.

Key Features

• High Voltage Capability: With a drain-source voltage of 600V, the STB34NM60N is well-suited for applications requiring high voltage thresholds.
• Low On-Resistance: The MOSFET boasts an extremely low on-resistance of 0.093 ohm (typical), which enhances its efficiency by minimizing conduction losses.
• High Current Rating: It can handle a continuous drain current of up to 28A, making it capable of powering demanding loads.
• Reduced Gate Charge: The device features a low gate charge (Qg), which improves the switching performance and reduces switching losses, making it ideal for high-frequency applications.
• Excellent dv/dt Capability: The STB34NM60N is engineered to withstand high dv/dt rates, ensuring stable operation under fast switching conditions.
• Ruggedized Device: Designed to be robust, it offers improved device reliability and longevity.

Applications

The STB34NM60N is versatile and can be used in a wide range of applications, including:

• Switch Mode Power Supplies (SMPS)
• LED Lighting
• High-Efficiency DC-DC Converters
• Motor Control
• Power Factor Correction (PFC) circuits
• Welding Equipment

Package and Quality

Housed in a robust D2PAK package, the STB34NM60N is designed for optimal thermal performance and space-saving on the PCB. STMicroelectronics is committed to delivering high-quality products, and the STB34NM60N is no exception, meeting stringent industry standards for performance and reliability.

Whether for industrial or consumer applications, the STB34NM60N from STMicroelectronics represents a reliable and efficient solution for designers seeking a high-voltage, low-loss MOSFET with superior switching characteristics.