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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series PowerMESH™
Package Tape & Reel (TR)
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 25 A
Current - Collector Pulsed (Icm) 50 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 7A
Power - Max 80 W
Input Type Standard
Gate Charge 35 nC
Td (on/off) @ 25°C 18.5ns/72ns
Test Condition 390V, 7A, 10Ohm, 15V
Reverse Recovery Time (trr) 37 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Base Product Number STGB7
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277346-STGB7NC60HT4
Ultra Librarian 3D Model Ultra Librarian STGB7NC60HT4 CAD Model

Description

STGB7NC60HT4 - IGBT from STMicroelectronics

The STGB7NC60HT4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics, a global leader in semiconductor solutions. This particular IGBT is designed for a wide array of applications, including motor drives, uninterruptible power supplies (UPS), and general-purpose inverters. It offers a perfect blend of low conduction losses and high switching speeds, making it an ideal choice for high-efficiency power management tasks.

The device is housed in a D2PAK package, which is known for its compact footprint and excellent thermal performance. The STGB7NC60HT4 is capable of operating at high temperatures, maintaining stability and reliability even under stressful conditions. With a collector-emitter voltage (V<sub>CE) of 600V and a collector current (I<sub>C) rating of 7A, this IGBT can handle significant power levels while ensuring reduced energy wastage through lower on-state voltage (V<sub>CE(sat)).

One of the key features of the STGB7NC60HT4 is its co-packaged freewheeling diode, which provides protection against reverse voltage spikes and enhances the overall efficiency of the circuit by allowing for smooth current decay during switching events. The device also boasts a tight parameter distribution, which results in better performance consistency and predictability in circuit designs.

Furthermore, the STGB7NC60HT4 incorporates advanced trench gate field-stop technology, which significantly reduces both the turn-on and turn-off energy losses. This technology, combined with the optimized co-pack structure, allows for reduced electromagnetic interference (EMI) and improved switching behavior, contributing to a cleaner and more energy-efficient operation.

In summary, the STGB7NC60HT4 from STMicroelectronics is a robust and efficient IGBT that offers an excellent solution for designers looking to optimize their power management systems. Its advanced features and reliable performance make it a preferred choice for a range of high-power applications.

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