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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Cut Tape (CT)
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 17A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 220mOhm at 8.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 66nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 1900pF at 50V
Power Dissipation (Maximum) 140W
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1260626-STB21NM60N
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STB21NM60N CAD Model

Description

STB21NM60N - N-channel 600V - 0.19Ω - 20A - D2PAK/I2PAK/TO-220/TO-220FP MDmesh™ II Power MOSFET

The STB21NM60N is a high-performance N-channel Power MOSFET from STMicroelectronics, designed to offer the best-in-class performance for a variety of applications that demand high efficiency and fast switching. This MOSFET is part of the MDmesh™ II series, which is renowned for its revolutionary technology that reduces on-resistance and total gate charge, ensuring minimal power dissipation during operation.

With a robust 600V breakdown voltage, the STB21NM60N is well-suited for high voltage applications, including switched-mode power supplies, lighting, welding, and high-performance drives. It features an extremely low on-resistance of only 0.19Ω, which significantly enhances its efficiency by minimizing conduction losses.

The device is capable of handling continuous currents up to 20A, making it an excellent choice for power-intensive applications. Its fast switching capabilities are complemented by a low gate charge, which enables high-frequency operation while reducing switching losses. This combination of features makes the STB21NM60N a highly efficient solution for power conversion.

STMicroelectronics offers the STB21NM60N in multiple package options, including D2PAK, I2PAK, TO-220, and TO-220FP, providing flexibility for various design requirements. The device's package is engineered to guarantee good thermal performance and to facilitate easier mounting on a PCB.

The MOSFET also incorporates an avalanche ruggedness feature, which ensures the device is safeguarded against unexpected voltage spikes, thus providing enhanced reliability and longevity in harsh environments. Furthermore, the STB21NM60N is designed with 100% avalanche testing, ensuring that each component is reliable and capable of withstanding tough conditions.

In summary, the STB21NM60N from STMicroelectronics is a robust and efficient power MOSFET, ideal for designers looking to optimize the performance and reliability of their high voltage power applications. Its cutting-edge MDmesh™ II technology, combined with its exceptional electrical characteristics, makes it a top choice for energy-conscious and space-constrained designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.8070 $67.2980
33+ $3.9442 $130.1586
51+ $3.8213 $194.8863
70+ $3.6971 $258.7970
91+ $3.5743 $325.2613
122+ $3.2042 $390.9124
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 32,000 pieces
MOQ: 14 pcs
Order Increment : 1 piece
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