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STB18N60M2

Part No STB18N60M2
Manufacturer STMicroelectronics
Catalog FETs - Single
Description Low gate input resistance | MOSFET N-CH 600V D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 13A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 280mOhm at 6.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 21.5nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 791pF at 100V
Power Dissipation (Maximum) 110W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1260613-STB18N60M2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STB18N60M2 CAD Model

Description

STB18N60M2 - Power MOSFET by STMicroelectronics

The STB18N60M2 is a cutting-edge power MOSFET device designed and manufactured by STMicroelectronics, a renowned leader in semiconductor solutions. This high-performance MOSFET is part of their MDmesh™ M2 series, which utilizes innovative technology to provide energy-efficient power conversion in a wide array of applications.

Key Features

  • High Voltage Capability: The STB18N60M2 boasts a robust 600V drain-source breakdown voltage (V<sub>DS), making it ideal for high-voltage switching applications.
  • Low On-Resistance: With an on-resistance (R<sub>DS(on)) of just 0.165 Ω, this MOSFET ensures minimal power loss during operation, leading to higher efficiency in power conversion.
  • Low Gate Charge: A reduced gate charge (Q<sub>g) enhances the switching performance of the device, contributing to lower switching losses and faster operation.
  • Improved dv/dt Capability: The device is designed to handle fast voltage changes, ensuring stability and reliability in applications with rapid switching requirements.
  • 100% Avalanche Tested: Each unit undergoes rigorous testing to guarantee safe operation under conditions that may induce avalanche.

Applications

The STB18N60M2 is versatile and can be used in a variety of power applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • High-Efficiency DC-DC Converters
  • Welding Equipment
  • Uninterruptible Power Supplies (UPS)

Package and Mounting

This MOSFET comes in a TO-220 package, which is widely used in the industry due to its ability to handle high power levels and its ease of mounting on printed circuit boards (PCBs). The TO-220 package also provides excellent thermal performance, which is critical for maintaining reliability and extending the lifespan of the device.

Environmental and Quality Certifications

STMicroelectronics is committed to environmental sustainability and quality. The STB18N60M2 complies with various international standards, ensuring that it meets the demands of environmentally conscious applications and industries.

For engineers and designers looking for a reliable, high-performance power MOSFET, the STB18N60M2 from STMicroelectronics offers an exceptional balance of efficiency, robustness, and versatility, making it an excellent choice for advanced power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.5425 $54.5100
27+ $3.7272 $100.6344
42+ $3.6107 $151.6494
58+ $3.4942 $202.6636
75+ $3.3778 $253.3350
100+ $3.0284 $302.8400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 75,000 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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