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Manufacturer STMicroelectronics
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 450mOhm at 6A, 10V
Vgs(th) (Maximum) at Id 5V at 100μA
Gate Charge (Qg) (Maximum) at Vgs 29nC at 10V
Maximum Vgs ±30V
Input Capacitance (Ciss) (Maximum) at Vds 870pF at 100V
Power Dissipation (Maximum) 190W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Part Number Series STB13N
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 813174-STB13N80K5
Ultra Librarian 3D Model Ultra Librarian STB13N80K5 CAD Model

Description

STB13N80K5 - N-channel 800 V, 0.28 Ohm typ., 10 A MDmesh K5 Power MOSFET in a D2PAK package

The STB13N80K5 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, a leader in semiconductor solutions. This device is a part of the MDmesh™ K5 series, which is renowned for its excellent efficiency in high-voltage applications. It is encapsulated in a robust and reliable D2PAK package, making it suitable for a wide range of power applications.

With a drain-source voltage (V<sub>DS) of 800 V, the STB13N80K5 is designed to handle high voltage levels, which makes it ideal for applications such as switch-mode power supplies (SMPS), lighting, welding, and other high-voltage switching applications. The low on-resistance (R<sub>DS(on)) of just 0.28 Ohm typ. ensures high efficiency and reduced power losses during operation, which is crucial for maintaining performance and energy savings in power-intensive applications.

The device can handle a continuous drain current (I<sub>D) of 10 A, providing ample current handling capability for a variety of electronic circuits. Furthermore, the MOSFET features a 100% avalanche tested design, ensuring reliability and robustness in demanding situations where the device may be subjected to high-energy pulses.

STMicroelectronics has integrated its state-of-the-art MDmesh K5 technology into the STB13N80K5, which combines a vertical structure with a new proprietary strip layout. This innovative design minimizes on-state resistance while maintaining superior switching performance and ease of drive. This technology also provides the benefit of Zener protection, which enhances the safety and longevity of the device by protecting it against overvoltage conditions.

The STB13N80K5 also includes a fast recovery diode, which is an essential feature for applications that require fast switching and low reverse recovery time to ensure efficiency and reduce electromagnetic interference (EMI).

In summary, the STB13N80K5 from STMicroelectronics is a powerful and reliable component for designers looking to improve the performance and efficiency of their high-voltage power applications. Its advanced technology, robust design, and high-voltage capability make it a top choice for engineers in a variety of industries.

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