The STMicroelectronics M58WR016QB45ZB6 is a state-of-the-art non-volatile memory chip that offers a high-density storage solution for a wide range of applications. This 16 Mbit (1Mb x16, Boot Block) flash memory device is designed to provide a reliable and efficient storage medium for firmware and data that need to be preserved across power cycles.

Key Features

• Memory Size: 16 Mbit, organized as 1M x 16, which provides ample space for boot code, operating system, or application storage.
• Boot Block Architecture: The memory features a boot block sector architecture that allows for easy firmware updates and provides a protected area for critical code.
• Access Time: With an access time of 45ns, this memory chip offers fast read operations, which is essential for high-performance applications.
• Operating Voltage: The M58WR016QB45ZB6 operates within a range of 2.7V to 3.6V, making it suitable for low-power devices and applications.
• Programming: The chip supports standard programming voltages and features a command set compatible with the JEDEC standards for easy integration.
• Temperature Range: Designed to operate within an industrial temperature range, this memory chip can withstand harsh environments and maintain its reliability.
• Package: Available in a 64-ball FBGA (Fine-pitch Ball Grid Array) package, the M58WR016QB45ZB6 is designed for space-constrained applications.

Applications

The versatility of the M58WR016QB45ZB6 makes it ideal for a wide variety of applications, including but not limited to:

• Embedded systems
• Automotive electronics
• Industrial control systems
• Networking equipment
• Telecommunication infrastructure
• Consumer electronics

With its robust design and advanced technology, the STMicroelectronics M58WR016QB45ZB6 flash memory chip is an excellent choice for designers looking for a reliable non-volatile memory solution that can meet the demands of modern electronic systems.