The 2STN1360 is a high-performance NPN silicon transistor designed and manufactured by STMicroelectronics, a global semiconductor leader known for its innovative and reliable components. This transistor is specifically engineered to address a wide range of applications that require switching and amplification functions.
Key Features
- High Current Capability: The 2STN1360 can handle significant current, making it suitable for high-power applications.
- Low Saturation Voltage: It features a low collector-emitter saturation voltage, which enhances efficiency by minimizing power loss during operation.
- Fast Switching Speed: With its quick response time, the 2STN1360 is ideal for circuits that require rapid switching capabilities.
- Durable Construction: STMicroelectronics has designed this transistor with robustness in mind, ensuring it can withstand harsh conditions and provide a long operational lifespan.
Applications
The versatility of the 2STN1360 makes it suitable for a diverse range of applications, including:
- Power management circuits
- Motor control systems
- Audio amplifiers
- Signal processing
- Switching regulators
- General-purpose amplification
Product Specifications
Parameter
Value
Configuration
Single
Collector-Emitter Voltage (Vceo)
60V
Collector Current (Ic)
1A
Power Dissipation (Pd)
20W
DC Current Gain (hFE)
40 to 160
Operating Temperature Range
-65°C to 150°C
With its exceptional performance and reliability, the 2STN1360 from STMicroelectronics stands out as a superior choice for designers and engineers looking to integrate a robust NPN transistor into their electronic designs.
