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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Mfr Solid State Inc.
Package Box
Product Status Active
Transistor Type PNP
Voltage - Collector Emitter Breakdown (Max) 30V
Frequency - Transition 1.3GHz
Power - Max 1W
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 100mA, 2V
Current - Collector (Ic) (Max) 500mA
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39
Standard Package 10 pcs
MSL Level Not Applicable
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 10250-2N5583
Ultra Librarian 3D Model Ultra Librarian 2N5583 CAD Model

Description

2N5583 Description

The 2N5583 is a high-voltage, high-frequency N-channel JFET, designed to deliver superior performance in applications that demand high-speed and high-voltage operation.

Applications

  • High-frequency amplifiers
  • RF mixers
  • Fast-switching circuits
  • Telecommunications equipment

Features and Benefits

  • High voltage tolerance, accommodating demanding circuits
  • Rapid switching speed, improving circuit efficiency
  • High-frequency performance, ideal for RF applications
  • Robust design, ensuring long-term reliability

The 2N5583's high-performance capabilities make it particularly well-suited for high-tech, precision-oriented projects where reliability and efficiency are crucial.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $8.0342 $72.3078
20+ $6.5922 $131.8440
31+ $6.3862 $197.9722
42+ $6.1803 $259.5726
55+ $5.9743 $328.5865
73+ $5.3562 $391.0026
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 67 pieces
MOQ: 9 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?
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