The SST29EE020-120-4C-NHE is a 2 Mbit page-mode EEPROM (Electrically Erasable Programmable Read-Only Memory) manufactured by Silicon Storage Technology (SST). This device offers non-volatile storage with fast read access times and in-system programmability. The page-mode operation enhances write performance, making it suitable for applications where frequent data updates are required.

Applications:

• Data Logging: Used in data loggers to store sensor data and other information.
• Configuration Storage: Stores configuration parameters for embedded systems.
• Firmware Storage: Houses firmware code for microcontrollers and other devices.
• Gaming Cartridges: Functions as storage media for game data and code.

Features:

• 2 Mbit Capacity: Provides 2 megabits of non-volatile storage.
• Page-Mode Operation: Enhances write performance by allowing multiple bytes to be written in a single operation.
• Fast Read Access Time: Offers quick data retrieval with a read access time of 120 ns.
• In-System Programmability: Can be programmed without removal from the system.
• Low Power Consumption: Designed for low-power operation in battery-powered devices.

Benefits:

• Non-Volatile Storage: Retains data even when power is removed.
• Fast Write Times: Page-mode operation accelerates data writing.
• Easy Reprogramming: In-system programmability simplifies firmware updates.
• Low Power: Suitable for battery-powered applications.

Technical Specifications:

The SST29EE020-120-4C-NHE features the following specifications:

• Memory Size: 2 Mbit (256K x 8)
• Organization: 256K x 8 bits
• Read Access Time: 120 ns
• Write Cycle Time: 10 ms
• Operating Voltage: 4.5V to 5.5V
• Package: DIP28
• Operating Temperature: 0°C to +70°C (Commercial)

For precise specifications, refer to the official SST29EE020 datasheet.