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SSM70T03GJ

Part No SSM70T03GJ
Manufacturer Silicon Standard Corp.
Catalog Electronic Wholesale
Description N-channel Enhancement-mode Power MOSFET
Sample
Rohs State rohs
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Manufacturer Silicon Standard Corp.
Win Source Part Number 1259621-SSM70T03GJ
Manufacturer Homepage www.siliconstandard.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM70T03GJ CAD Model

Description

The SSM70T03GJ is a P-Channel MOSFET manufactured by Silicon Standard Corp. It is designed for use in power management applications such as load switching, power inverters, and DC-DC converters. Its low on-resistance (RDS(on)) minimizes power loss and improves efficiency.

Applications:

  • Load Switching: Controlling power to various loads in electronic systems.
  • Power Management: Efficient power distribution and regulation in portable devices.
  • DC-DC Converters: Switching element in DC-DC voltage conversion circuits.
  • Power Inverters: Converting DC power to AC power.
  • Battery Management Systems: Protection and control of battery charging and discharging.

Features:

  • P-Channel MOSFET: Allows for simpler gate drive circuitry compared to N-channel MOSFETs in certain applications.
  • Low On-Resistance (RDS(on)): Reduces power loss and improves efficiency.
  • Low Gate Threshold Voltage (VGS(th)): Enables operation with low voltage logic levels.
  • High Drain Current (ID): Capable of handling significant current loads.
  • Surface Mount Package: SOP-8 package for efficient PCB assembly.

Benefits:

  • High Efficiency: Low RDS(on) minimizes power dissipation.
  • Simplified Gate Drive: Easier to drive in certain applications.
  • Compact Size: SOP-8 package saves board space.
  • Reliable Performance: Stable characteristics over a wide range of operating conditions.
  • Suitable for Battery-Powered Applications: Low gate threshold voltage for operation with low supply voltages.

Technical Specifications:

The SSM70T03GJ features a drain-source voltage (VDS) of typically -30V. The gate-source voltage (VGS) is typically ±20V. The continuous drain current (ID) is around -7A. The on-resistance (RDS(on)) is low, typically around 25 mΩ at VGS = -10V. The gate threshold voltage (VGS(th)) is typically between -1V and -3V. The device is packaged in a SOP-8 package. The operating temperature range is from -55°C to +150°C. This MOSFET's low on-resistance and low gate threshold voltage make it well-suited for applications requiring high efficiency and compatibility with low-voltage logic.

The SSM70T03GJ P-Channel MOSFET provides an efficient and reliable solution for power management and switching applications. Its low on-resistance and compact size make it suitable for a wide range of electronic devices, particularly those requiring high efficiency and low voltage operation.

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