The SVD8N80F is an 800V N-channel MOSFET manufactured by Silan Semiconductor, designed for high-efficiency power switching applications. It features low on-state resistance and a fast switching speed, enabled by advanced trench MOSFET technology. The device is packaged in a TO-220F isolated package.
Applications:
- Switch Mode Power Supplies (SMPS)
- Power Factor Correction (PFC) Circuits
- Uninterruptible Power Supplies (UPS)
- Electronic Ballasts
- DC-DC Converters
Features:
- High Voltage Capability: 800V
- Low On-State Resistance: typically 1.0 Ohms @ Vgs = 10V
- Fast Switching Speed
- Low Gate Charge: typically 15 nC
- Avalanche Energy Rated
- Isolated TO-220F Package
Benefits:
- Improved Efficiency due to Low On-State Resistance
- Reduced Power Losses and Heat Generation
- Simplified Thermal Management
- Increased System Reliability
- Suitable for High-Frequency Switching Applications
- Cost-Effective Solution for Power Switching
Additional Details:
The SVD8N80F's avalanche ruggedness provides robustness against voltage spikes. The isolated TO-220F package allows for secure mounting and electrical isolation from the heatsink. It's designed for operation across a temperature range of -55°C to +150°C. The low gate charge contributes to reduced switching losses.
Technical Specifications:
- Drain-Source Voltage (Vds): 800V
- Gate-Source Voltage (Vgs): ±30V
- Continuous Drain Current (Id): 8A
- Pulsed Drain Current (Idm): 24A
- Single Pulse Avalanche Energy (Eas): 150mJ
- Operating Junction Temperature: -55°C to +150°C
