The SVD8N80F is an 800V N-channel MOSFET manufactured by Silan Semiconductor, designed for high-efficiency power switching applications. It features low on-state resistance and a fast switching speed, enabled by advanced trench MOSFET technology. The device is packaged in a TO-220F isolated package.

Applications:

• Switch Mode Power Supplies (SMPS)
• Power Factor Correction (PFC) Circuits
• Uninterruptible Power Supplies (UPS)
• Electronic Ballasts
• DC-DC Converters

Features:

• High Voltage Capability: 800V
• Low On-State Resistance: typically 1.0 Ohms @ Vgs = 10V
• Fast Switching Speed
• Low Gate Charge: typically 15 nC
• Avalanche Energy Rated
• Isolated TO-220F Package

Benefits:

• Improved Efficiency due to Low On-State Resistance
• Reduced Power Losses and Heat Generation
• Simplified Thermal Management
• Increased System Reliability
• Suitable for High-Frequency Switching Applications
• Cost-Effective Solution for Power Switching

Additional Details:

The SVD8N80F's avalanche ruggedness provides robustness against voltage spikes. The isolated TO-220F package allows for secure mounting and electrical isolation from the heatsink. It's designed for operation across a temperature range of -55°C to +150°C. The low gate charge contributes to reduced switching losses.

Technical Specifications:

• Drain-Source Voltage (Vds): 800V
• Gate-Source Voltage (Vgs): ±30V
• Continuous Drain Current (Id): 8A
• Pulsed Drain Current (Idm): 24A
• Single Pulse Avalanche Energy (Eas): 150mJ
• Operating Junction Temperature: -55°C to +150°C