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2SK2669

Part No 2SK2669
Manufacturer Shindengen
Catalog Hard To Find
Description HVX-2 Series Power MOSFET(900V 5A)
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Shindengen
Win Source Part Number 1127338-2SK2669
Manufacturer Homepage www.shindengen.co.jp/
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SK2669 CAD Model

Description

The 2SK2669 is an N-channel power MOSFET produced by Shindengen Electric Manufacturing Co., Ltd. It is engineered for high-efficiency switching applications, specifically excelling in demanding environments such as power supplies, DC-DC converters, and motor control circuits. Its design prioritizes low on-resistance and gate charge to minimize power losses and maximize performance.

Applications:

  • Switching Power Supplies
  • DC-DC Converters
  • Motor Control Circuits
  • Uninterruptible Power Supplies (UPS)
  • Inverters

Features:

  • N-Channel MOSFET
  • Low On-Resistance (RDS(on))
  • High-Speed Switching Capability
  • Low Gate Charge (Qg)
  • Avalanche Energy Rated
  • Enhancement Mode Device

Benefits:

  • Enhanced Power Efficiency: The 2SK2669's low on-resistance directly translates to reduced conduction losses, increasing the efficiency of power conversion processes.
  • Reduced Switching Losses: The low gate charge allows for rapid switching speeds, minimizing the energy lost during switching transitions and boosting overall system efficiency.
  • Superior Thermal Performance: The device's thermal design allows for effective heat dissipation, ensuring stable and reliable operation, even in high-power applications.
  • Simplified Drive Circuitry: As an enhancement mode device, the 2SK2669 simplifies gate drive requirements, making it easier to integrate into various circuit designs.
  • Improved System Reliability: The avalanche rating ensures the device can withstand transient voltage spikes, increasing the robustness and longevity of the system.

Additional Details:

The 2SK2669 is commonly available in a through-hole package, facilitating easy installation and connection to heatsinks for enhanced thermal management. Key electrical parameters include the drain-source voltage (VDS), gate-source voltage (VGS), and continuous drain current (ID), which need careful consideration when selecting the device for specific applications. Dynamic characteristics, such as rise time (tr), fall time (tf), and turn-on delay time (td(on)), are crucial for high-frequency switching applications.

When using the 2SK2669, it's important to adhere to the manufacturer's recommended operating conditions and derating curves to prevent exceeding maximum ratings. Proper gate drive circuitry is essential for ensuring fast and efficient switching performance. Adequate heatsinking is necessary to maintain the junction temperature within specified limits and ensure long-term reliability.

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