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GPA020A135MN-FD

Part No GPA020A135MN-FD
Manufacturer SemiQ
Catalog IGBTs - Single
Description IGBT 1350V 40A 223W TO3PN  /  IGBT Trench Field Stop 1350 V 40 A 223 W Through Hole TO-3PN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr SemiQ
Package Tube
Product Status Obsolete
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1350 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 60 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 20A
Power - Max 223 W
Switching Energy 2.5mJ (on), 760µJ (off)
Input Type Standard
Gate Charge 180 nC
Td (on/off) @ 25°C 25ns/175ns
Test Condition 600V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr) 425 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3PN
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 1560-1217-2-ND,1560-1217-1-ND,1560-1217-2INACTIVE,1560-1217-1,1560-1217-2,1560-1217-5
Standard Package 1
Win Source Part Number 1060982-GPA020A135MN-FD
Ultra Librarian 3D Model Ultra Librarian GPA020A135MN-FD CAD Model

Description

The 1060982-GPA020A135MN-FD is a single IGBT transistor that is part of the Discrete Semiconductor Products category.

  • Power Max: 223 W
  • Reverse Recovery Time: 425 ns
  • Series: Trench Field Stop
  • Voltage Breakdown: 1350 V
  • Current Collector: 40 A
  • Pulsed Collector Current: 60 A
  • Switching Energy (On): 2.5mJ
  • Switching Energy (Off): 760μJ
  • Input Type: Standard
  • Gate Charge: 180 nC
  • REACH Compliant: Yes
  • Temperature Range: -55°C to 150°C
  • Status: Obsolete

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