The MMBT5551W is a high-voltage NPN bipolar junction transistor (BJT) manufactured by SECOS. It is designed for use in a variety of general-purpose amplifier and switching applications. Its high breakdown voltage makes it particularly suitable for circuits where higher voltages are present. The device is offered in a small SOT-323 package for surface mount applications, which enables efficient and compact circuit designs.

Applications:

• High-voltage switching
• Amplifier circuits
• Linear regulators
• Electronic ballast circuits
• Interface circuits

Features:

• High Collector-Emitter Breakdown Voltage (VCEO): Enables use in high-voltage applications.
• Low Collector-Emitter Saturation Voltage (VCE(sat)): Ensures efficient switching performance.
• High Transition Frequency (fT): Allows for high-speed switching and amplification.
• Surface Mount Package: Facilitates automated assembly and compact circuit designs.
• RoHS Compliant: Meets environmental regulations for hazardous substances.

Benefits:

• Versatile Application: Suitable for both amplification and switching roles.
• High Reliability: High breakdown voltage improves reliability in demanding circuits.
• Efficient Switching: Low saturation voltage minimizes power dissipation.
• Compact Design: Small SOT-323 package enables space-saving designs.
• Environmentally Friendly: RoHS compliance ensures adherence to environmental standards.

Technical Specifications:

The MMBT5551W features a collector-emitter voltage (VCEO) of 160V, a collector current (IC) of 600mA, and a transition frequency (fT) of typically 100 MHz. The power dissipation is 350mW. It operates over a temperature range of -55°C to +150°C and is packaged in a SOT-323 surface mount package. This transistor is designed for reliable performance in high-voltage and high-frequency applications.