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KM68V1000CLTE-7L

Part No KM68V1000CLTE-7L
Manufacturer Samsung
Catalog OEM Parts (J - L)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1067583-KM68V1000CLTE-7L
Categories OEM Parts(J-L)
Manufacturer Samsung
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian KM68V1000CLTE-7L CAD Model

Description

The KM68V1000CLTE-7L is a high-performance 1Mb Static RAM (SRAM) manufactured by Samsung. Organized as 128K x 8 bits, this SRAM provides a fast and reliable memory solution for a variety of applications. It operates on a single 3.3V power supply and features TTL-compatible inputs and outputs, ensuring seamless integration with various digital systems. The '7L' suffix indicates a specific speed grade, typically denoting a faster access time.

Applications:

  • Cache memory in embedded systems
  • Buffer memory in high-speed data acquisition systems
  • Networking equipment
  • Industrial control systems
  • Portable electronic devices requiring fast memory access

Features:

  • High-speed access time: Enables rapid data retrieval and storage operations.
  • Low power consumption: Minimizes power requirements, making it suitable for battery-powered applications.
  • Single 3.3V power supply: Simplifies power supply design.
  • TTL-compatible inputs and outputs: Facilitates easy interfacing with other digital logic circuits.
  • Fully static operation: Eliminates the need for refresh cycles, simplifying system design.
  • Data retention capability: Ensures data integrity during power loss or standby mode.

Benefits:

  • Improved system performance due to fast memory access.
  • Extended battery life in portable devices due to low power consumption.
  • Simplified system design with single power supply and no refresh requirements.
  • Easy integration with existing digital systems through TTL compatibility.
  • Reliable data storage ensured by data retention capabilities.

The KM68V1000CLTE-7L is ideal for applications where speed and low power consumption are critical. Its fully static operation simplifies memory control, while TTL compatibility allows for easy integration into various digital systems. Its high-speed access time improves overall system performance, and its low power consumption makes it suitable for battery-powered devices. This SRAM device offers a reliable and efficient memory solution for demanding applications.

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