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K4T51083QJ-BCE6000

Part No K4T51083QJ-BCE6000
Manufacturer Samsung
Catalog RAM
Description DDR2 Sdram 512MB 64M*8 J-die 667 333MHZ Horlogen & Lead Free
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

RoHS Non-Compliant
Win Source Part Number 1032289-K4T51083QJ-BCE6000
Categories RAM
Manufacturer Samsung
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian K4T51083QJ-BCE6000 CAD Model

Description

The Samsung K4T51083QJ-BCE6000 is a DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random-Access Memory) component designed for high-performance applications requiring fast data transfer rates and efficient memory operations. This RAM chip is specifically engineered to provide reliable and quick memory access for various systems, including desktop computers, laptops, and embedded devices. Its DDR3 architecture allows for higher bandwidth and lower power consumption compared to previous generations of SDRAM.

Applications

  • Desktop Computers
  • Laptops
  • Embedded Systems
  • Gaming Consoles
  • Networking Devices

Features

  • High-Speed Data Transfer: DDR3 technology enables faster data transfer rates compared to DDR2, improving system performance.
  • Lower Power Consumption: Designed to operate at a lower voltage, reducing energy usage and heat generation.
  • Increased Bandwidth: Provides a higher bandwidth for data transfer, allowing for quicker application loading and execution.
  • Improved Signal Integrity: Enhanced signal integrity ensures stable and reliable data transfer.
  • Advanced Packaging: Utilizes advanced packaging technology to improve thermal performance and reliability.

Benefits

  • Enhanced System Performance: Faster data transfer rates lead to quicker application loading and improved multitasking capabilities.
  • Energy Efficiency: Lower power consumption reduces overall system power requirements and extends battery life in portable devices.
  • Improved Reliability: Stable data transfer and advanced packaging ensure reliable operation under different environmental conditions.
  • Increased Memory Capacity: Allows for higher memory densities, enabling support for more demanding applications.
  • Cost-Effective Solution: Provides a balance of performance and cost, making it a suitable choice for a wide range of applications.

Additional Details

The K4T51083QJ-BCE6000 typically operates at a voltage of 1.5V, which is lower than DDR2, contributing to its energy efficiency. It is designed to comply with JEDEC standards, ensuring compatibility with various motherboards and memory controllers. Detailed specifications, including timing parameters, operating conditions, and module configurations, can be found in the official Samsung datasheet for this specific part number.

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