The Samsung K4T1G164QG-BCF8 is a 1Gb (Gigabit) DDR3 SDRAM memory chip. It is designed for high-performance applications requiring fast data access and transfer rates. This memory component is commonly used in various electronic devices, including computers, mobile devices, and embedded systems.
Applications
- Desktop and laptop computers
- Mobile phones and tablets
- Gaming consoles
- Networking equipment
- Embedded systems
Features
- 1Gb (128M x 8) capacity
- DDR3 SDRAM technology
- Data transfer rates up to 1600 Mbps
- 8-bit prefetch architecture
- Double data rate architecture
- Auto refresh and self refresh modes
Benefits
- High-speed data access and transfer
- Increased system performance
- Low power consumption
- Reduced latency
- High reliability
Additional Details
The K4T1G164QG-BCF8 operates at a voltage of 1.5V. It features a 96-ball FBGA (Fine-pitch Ball Grid Array) package for surface mounting. The chip supports various power-saving modes, including auto refresh and self refresh, to minimize power consumption when the memory is not actively being accessed. The 8-bit prefetch architecture allows for efficient data retrieval and storage. The double data rate architecture enables data transfer on both the rising and falling edges of the clock signal, effectively doubling the data transfer rate. The specific timing parameters, such as CAS latency (CL), tRCD, and tRP, can be found in the Samsung datasheet. Proper PCB layout and signal integrity are crucial for ensuring optimal performance and stability. The memory chip is designed to meet JEDEC standards. Operating temperature range is usually between 0°C to 85°C. Ensure proper handling procedures are followed during assembly to prevent damage to the device.