The Samsung K4T1G1646QF-BCE7 is a 1Gb DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random-Access Memory). This memory component is designed for high-speed data transfer and is commonly used in various electronic devices requiring large memory capacity and fast performance.

Applications

• PCs and Laptops
• Gaming Consoles
• Networking Equipment
• Graphics Cards
• Embedded Systems

Features

• 1Gb (128M x 8) memory organization
• Double Data Rate architecture
• Data transfer rates up to DDR3-1600
• 8 internal banks for concurrent operations
• 8-bit pre-fetch architecture
• On-die termination (ODT) for improved signal integrity
• Lead-free and RoHS compliant

Benefits

• High bandwidth enables fast data processing and improves system performance.
• Large memory capacity accommodates demanding applications and multitasking.
• Low power consumption contributes to energy efficiency and longer battery life in portable devices.
• On-die termination reduces signal reflections and improves signal integrity, leading to more reliable operation.
• Compliant with environmental standards for responsible manufacturing.

Technical Specifications

The K4T1G1646QF-BCE7 operates at a voltage of 1.5V and supports various DDR3 speed grades, including DDR3-800, DDR3-1066, DDR3-1333, and DDR3-1600. The BCE7 indicates a specific speed grade and timing parameters relevant to its performance. It features auto refresh and self-refresh modes for efficient power management.

The component is available in a FBGA (Fine-Pitch Ball Grid Array) package, which provides good thermal performance and facilitates high-density board designs. Its operating temperature range typically spans from 0°C to 85°C, making it suitable for various operating environments.