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IFR48P0T0SE05

Part No IFR48P0T0SE05
Manufacturer Samsung
Catalog OEM Parts (F - I)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 977582-IFR48P0T0SE05
Categories OEM Parts(F-I)
Manufacturer Samsung
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IFR48P0T0SE05 CAD Model

Description

The IFR48P0T0SE05 is a power MOSFET manufactured by Samsung. It's designed for high-efficiency power switching applications. This MOSFET leverages advanced trench technology to minimize on-state resistance and gate charge, thereby reducing power losses and improving overall system efficiency.

Applications

  • Synchronous Rectification in AC-DC and DC-DC converters
  • Power management in notebook computers and portable devices
  • Motor control applications
  • Load switching
  • Battery protection circuits

Features

  • Low on-state resistance (RDS(on))
  • Low gate charge (Qg)
  • Fast switching speed
  • Avalanche rated
  • Logic level gate drive
  • RoHS compliant

Benefits

  • Improved energy efficiency, reducing power consumption and heat generation
  • Enhanced system reliability due to lower operating temperatures
  • Reduced component count and board space requirements
  • Simplified gate drive circuitry
  • Suitable for high-frequency switching applications

Additional Details

The IFR48P0T0SE05 MOSFET is characterized by its low on-state resistance (RDS(on)), which minimizes conduction losses when the MOSFET is in the 'on' state. This is crucial for high-efficiency power conversion. The low gate charge (Qg) ensures fast switching speeds and reduces switching losses, further contributing to improved efficiency. The avalanche rating indicates the device's ability to withstand transient voltage spikes, enhancing its robustness and reliability. The logic level gate drive simplifies the gate drive circuitry, allowing it to be directly driven by logic-level signals. This MOSFET is suitable for a wide range of power management and control applications, including synchronous rectification, motor control, and battery protection. The RoHS compliance ensures that it meets environmental regulations.

The advanced trench technology employed in the IFR48P0T0SE05 enables it to achieve a high power density, allowing for smaller and more compact designs. Its thermal performance is optimized to dissipate heat effectively, contributing to long-term reliability. The device is available in a standard surface mount package, making it easy to integrate into automated assembly lines. Overall, the IFR48P0T0SE05 is a versatile and high-performance MOSFET that offers a compelling combination of efficiency, reliability, and ease of use.

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