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SH8K26 GZ0TB

Part No SH8K26 GZ0TB
Manufacturer Rohm Semiconductor
Catalog FETs - Arrays
Sample
Rohs State rohs
ECAD Module
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Manufacturer Rohm Semiconductor
Category Discrete Semiconductor Products
Family FETs - Arrays
Win Source Part Number 189498-SH8K26 GZ0TB
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SH8K26 GZ0TB CAD Model

Description

The SH8K26 GZ0TB is a P-channel MOSFET from Rohm Semiconductor, designed for high-efficiency switching applications.

Applications:

  • DC-DC Converters: Used in step-down and step-up DC-DC converters for voltage regulation.
  • Load Switching: Employed as a switch to control power to various loads in electronic circuits.
  • Power Management Circuits: Integrated into power management systems for efficient power distribution and control.
  • Portable Devices: Suitable for use in battery-powered devices such as smartphones and tablets.
  • Motor Control Circuits: Can be used in low-power motor control applications.

Features:

  • Low On-Resistance (Rds(on)): Reduces power loss during conduction, improving overall efficiency.
  • Low Gate Charge (Qg): Minimizes switching losses, enabling faster switching speeds.
  • Compact Surface Mount Package: Facilitates easy integration into space-constrained applications.
  • P-Channel Configuration: Simplifies gate drive circuitry in certain applications compared to N-channel MOSFETs.
  • High Avalanche Ruggedness: Provides robust performance under transient voltage conditions.

Benefits:

  • Improved Energy Efficiency: Reduces heat generation and lowers power consumption.
  • Extended Battery Life: Enables longer operating times for battery-powered devices.
  • Simplified Circuit Design: Reduces the number of components required for power management.
  • Compact Solution: Saves valuable board space in portable and space-sensitive applications.
  • Enhanced System Reliability: Offers stable and dependable performance across a range of operating conditions.

Additional Details:

The SH8K26 GZ0TB typically features a drain-source voltage (Vds) rating of -30V and a continuous drain current (Id) of -5A. Its low on-resistance contributes to reduced power dissipation and enhanced overall efficiency. The device's gate threshold voltage (Vgs(th)) ensures predictable switching behavior. The device is RoHS compliant, ensuring it meets environmental standards. Its thermal resistance characteristics allow for effective heat dissipation, ensuring safe operation at higher power levels. The device is designed for automated mounting and soldering processes.

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