The SCS110KGC is a Silicon Carbide (SiC) Schottky Barrier Diode manufactured by Rohm Semiconductor. These diodes offer superior performance compared to traditional silicon diodes, particularly in high-voltage, high-frequency, and high-temperature applications. Their use translates to higher efficiency and more robust designs.

Applications

• Power Factor Correction (PFC) circuits
• Motor Drives
• Solar Inverters
• On-board Chargers (OBC) for Electric Vehicles (EV)
• Server Power Supplies

Features

• Silicon Carbide (SiC) material, enabling high-voltage and high-temperature operation
• Virtually no reverse recovery current, minimizing switching losses
• Temperature-independent switching behavior, ensuring stable performance across a wide temperature range
• High surge current capability, providing robustness against transient events
• Surface-mount package, enabling automated assembly

Benefits

• Improved energy efficiency due to reduced switching losses.
• Increased power density due to high-temperature operation capability.
• Enhanced system reliability and robustness.
• Simplified design and layout due to temperature-independent switching.
• Reduced system cost due to smaller heatsink requirements.

Technical Specifications

The SCS110KGC features a repetitive peak reverse voltage (VRRM) of 650V and a continuous forward current (IF) of 10A at a specified temperature. The forward voltage (VF) is typically around 1.55V. The surge current capability is high, enhancing reliability. The operating junction temperature ranges from -55°C to +175°C. It features a surface mount package (TO-252). It offers excellent thermal performance, which contributes to the overall reliability and efficiency of the power electronic system. Because of the Silicon Carbide material, it allows for faster switching speeds and drastically reduced switching losses compared to standard Silicon diodes. Its low reverse recovery charge makes it an ideal choice for high-frequency applications. The storage temperature is also -55 to +175 °C.