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RZM002P02G T2L

Part No RZM002P02G T2L
Manufacturer Rohm Semiconductor
Catalog FETs - Single
Description Fet Mos Pc Vmt3
Sample
Rohs State rohs
ECAD Module
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Manufacturer Rohm Semiconductor
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 185110-RZM002P02G T2L
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Introduction Date January 01, 2000
Estimated EOL Date 2031
Ultra Librarian 3D Model Ultra Librarian RZM002P02G T2L CAD Model

Description

The RZM002P02G T2L is a P-channel MOSFET manufactured by Rohm Semiconductor. This MOSFET is designed for a variety of switching applications where a P-channel device is required. Its low on-resistance and fast switching speed make it suitable for efficient power management and load switching circuits.

Applications

  • Load Switching: Used to control power to various loads in electronic devices.
  • Power Management Circuits: Implemented in DC-DC converters and other power regulation circuits.
  • Portable Devices: Ideal for use in battery-powered devices due to its low on-resistance and efficient operation.
  • Motor Control: Used in low-power motor control applications.
  • Lighting Control: Can be used in LED lighting control circuits.

Features

  • P-Channel MOSFET: Allows for simple high-side switching.
  • Low On-Resistance (RDS(on)): Minimizes power loss during conduction, improving efficiency.
  • Fast Switching Speed: Enables efficient operation in high-frequency applications.
  • Surface Mount Package: Allows for easy integration into automated assembly processes.
  • RoHS Compliant: Compliant with Restriction of Hazardous Substances (RoHS) directive.

Benefits

  • High Efficiency: Low on-resistance reduces power dissipation, leading to higher energy efficiency.
  • Simplified Circuit Design: P-channel configuration simplifies high-side switching applications.
  • Compact Size: Small surface mount package saves board space.
  • Reliable Performance: Rohm Semiconductor's reputation ensures reliable and consistent performance.
  • Reduced Heat Generation: Lower power dissipation results in less heat, enhancing system stability.

Additional Details

Consult the Rohm Semiconductor RZM002P02G T2L datasheet for complete technical specifications, including drain-source voltage (VDS), gate-source voltage (VGS), drain current (ID), and on-resistance (RDS(on)) values. The datasheet also provides information on thermal characteristics, package dimensions, and recommended soldering conditions. This MOSFET is typically used in conjunction with a gate driver circuit to ensure proper switching characteristics. Careful attention should be paid to thermal management to prevent overheating, especially in high-current applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,140+ $0.0508 $57.9120
2,780+ $0.0416 $115.6480
4,290+ $0.0404 $173.3160
5,885+ $0.0393 $231.2805
7,580+ $0.0381 $288.7980
10,000+ $0.0347 $347.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,800 pieces
MOQ: 1140 pcs
Order Increment : 1 pcs
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