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RQ3E180GNTB

Name: RQ3E180GNTB
Brand: Rohm Semiconductor
SKU: 800506
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	RQ3E180GNTB
Manufacturer	Rohm Semiconductor
Catalog	FETs - Single
Description	MOSFET N-CH 30V 18A 8-HSMT
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Manufacturer	Rohm Semiconductor
Packaging	Reel
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) at 25°C	18A
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Maximum) at Id, Vgs	4.3mOhm at 18A, 10V
Vgs(th) (Maximum) at Id	2.5V at 1mA
Gate Charge (Qg) (Maximum) at Vgs	22.4nC at 10V
Maximum Vgs	±20V
Input Capacitance (Ciss) (Maximum) at Vds	1520pF at 15V
Power Dissipation (Maximum)	2W
Temperature Range - Operating	150°C
Mounting Style	SMD
Supplier Device Package	8-HSMT (3.2x3)
Manufacturer Package	8-PowerVDFN
Manufacturer Pack Quantity	3,000
MSL Level	1 (Unlimited)
Popularity	High
Supply and Demand Status	Sufficient
Win Source Part Number	800506-RQ3E180GNTB
Ultra Librarian 3D Model	Ultra Librarian RQ3E180GNTB CAD Model

Description

The Rohm Semiconductor RQ3E180GNTB is a MOSFET (Metal Oxide) semiconductor product manufactured by Rohm Semiconductor.

FET Type: N-Channel
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 8-HSMT (3.2x3)
Manufacturer Package: 8-PowerVDFN
Maximum Power Dissipation: 2W
Rds On (Maximum) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Gate Charge (Qg) (Maximum) @ Vgs: 22.4nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1520pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 18A
Vgs(th) (Maximum) @ Id: 2.5V @ 1mA
Maximum Vgs: ±20V

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
140+	$0.4156	$58.1840
340+	$0.3411	$115.9740
525+	$0.3303	$173.4075
725+	$0.3197	$231.7825
935+	$0.3091	$289.0085
1,255+	$0.2771	$347.7605

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 210,000 pieces

MOQ: 140 pcs

Order Increment : 1 pcs

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Expected Shipping Date	Ship today if order in (HKT)
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