The Rohm Semiconductor RQ3E100ATTB is a P-Channel MOSFET with a drain to source voltage (Vdss) of 30V. It has a maximum power dissipation of 2W and a drive voltage of 4.5V (max Rds on) and 10V (min Rds on).

• Transistor Type: MOSFET (P-Channel)
• Drain to Source Voltage (Vdss): 30V
• Maximum Power Dissipation: 2W
• Drive Voltage: 4.5V (max Rds on), 10V (min Rds on)
• Maximum Vgs: ±20V
• Operating Temperature: 150°C
• Packaging: Reel
• Manufacturer Pack Quantity: 3,000
• MSL Level: 1 (unlimited)
• Height: 3.2x3
• Thickness: 0.035" (0.90mm)
• Rds on (maximum) @ Id, Vgs: 11.4mOhm @ 10A, 10V
• Gate Charge (Qg) (maximum) @ Vgs: 42nC @ 10V
• Input Capacitance (Ciss) (maximum) @ Vds: 1900pF @ 15V
• Current - Continuous Drain (Id) @ 25°C: 10A, 31A (Tc)
• Vgs(th) (maximum) @ Id: 2.5V @ 1mA