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RMW200N03FUBTB1

Part No RMW200N03FUBTB1
Manufacturer Rohm Semiconductor
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Manufacturer Rohm Semiconductor
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 183528-RMW200N03FUBTB1
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RMW200N03FUBTB1 CAD Model

Description

The RMW200N03FUBTB1 is a 30V, N-channel power MOSFET from Rohm Semiconductor, engineered for efficient power switching applications. This MOSFET utilizes Rohm's advanced trench gate technology to minimize on-resistance and gate charge, thereby enhancing power conversion efficiency and reducing switching losses. Housed in a compact, surface-mount package, it provides excellent thermal performance, making it suitable for space-constrained environments.

Applications:

  • DC-DC Converters
  • Load Switching
  • Power Management in Portable Devices
  • Motor Control

Features:

  • Low On-Resistance: Minimizes conduction losses for enhanced efficiency.
  • Low Gate Charge: Reduces switching losses at high frequencies.
  • Trench Gate Structure: Provides superior switching performance.
  • Compact Package: Facilitates high-density board mounting.
  • 30V Drain-Source Voltage: Suitable for various low-voltage applications.

Benefits:

  • Improved Efficiency: Lower on-resistance and gate charge contribute to higher overall system efficiency.
  • Reduced Heat Generation: Lower losses translate to less heat, improving reliability and thermal management.
  • Faster Switching Speeds: Enhanced switching performance enables high-frequency operation.
  • Compact Design: Small package size allows for use in space-critical applications.
  • Enhanced Reliability: Robust design ensures stable performance under diverse operating conditions.

Additional Details:

The RMW200N03FUBTB1 has a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) that varies based on the application and thermal conditions. The on-resistance (Rds(on)) is notably low, contributing to its high efficiency. The gate-source threshold voltage (Vgs(th)) is designed for easy gate driving, and the total gate charge (Qg) is minimized to reduce switching losses. Power dissipation depends on the thermal characteristics of the application. It is packaged in a surface-mount package, optimized for thermal performance. This MOSFET is commonly used in synchronous rectification, load switching, and other power management functions in battery-powered devices, power adapters, and various industrial applications. Consult the specific datasheet for precise electrical characteristics, thermal resistance, and package dimensions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6736 $58.5760
85+ $1.3733 $116.7305
135+ $1.3306 $179.6310
180+ $1.2867 $231.6060
235+ $1.2439 $292.3165
315+ $1.1157 $351.4455
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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