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2SK2792

Part No 2SK2792
Manufacturer Rohm Semiconductor
Catalog Hard To Find
Description Switching (600V, 4A)
Sample
Rohs State rohs
ECAD Module
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Manufacturer Rohm Semiconductor
Win Source Part Number 1127374-2SK2792
Manufacturer Homepage www.rohm.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SK2792 CAD Model

Description

The 2SK2792 is an N-channel MOS Field Effect Transistor (MOSFET) manufactured by Rohm Semiconductor. This MOSFET is designed for high-speed switching applications and is commonly used in power supplies, DC-DC converters, and motor control circuits. Its low on-resistance (RDS(on)) minimizes power loss during switching, leading to increased efficiency.

Applications

  • Switching regulators
  • DC-DC converters
  • Motor control circuits
  • Power supplies
  • Load switches

Features

  • Low on-resistance (RDS(on))
  • High-speed switching
  • Low gate charge (Qg)
  • Avalanche energy rated
  • Pb-free lead plating; RoHS compliant

Benefits

  • Improved efficiency in power switching applications due to low RDS(on), reducing power dissipation and heat generation.
  • Fast switching speed minimizes switching losses.
  • Reduced gate drive requirements because of low gate charge.
  • Enhanced reliability and ruggedness due to avalanche energy rating.
  • Environmentally friendly due to Pb-free lead plating and RoHS compliance.

Additional Details

The 2SK2792 typically comes in a TO-220 or similar through-hole package. It’s crucial to adhere to the specifications outlined in the datasheet for reliable operation. This includes managing thermal characteristics and ensuring that the device operates within its maximum voltage and current ratings. Proper heatsinking is usually required to prevent overheating, especially when the MOSFET is switching high currents at high frequencies.

Key electrical parameters include drain-source voltage (VDS), gate-source voltage (VGS), and continuous drain current (ID). Its low gate threshold voltage facilitates easy driving of the MOSFET. The total gate charge (Qg) and the gate resistance influence the switching speed. The device's operating temperature range and storage temperature should also be considered for long-term reliability. Datasheets provide comprehensive information on thermal resistance, which is vital for designing proper cooling solutions.

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