The 2SCR513P GZET100 is a silicon NPN epitaxial planar transistor manufactured by Rohm Semiconductor. It is designed for high-frequency amplification and switching applications. This transistor is known for its low saturation voltage and high current capability, making it suitable for various electronic circuits.

Applications

• High-frequency amplifiers
• Switching circuits
• Oscillators
• Mixers
• Driver stages

Features

• Low saturation voltage
• High current capability
• High transition frequency
• Small signal amplification
• Pb-free (RoHS compliant)

Benefits

• Improved circuit efficiency
• Enhanced switching performance
• Stable operation at high frequencies
• Compact design
• Environmentally friendly

Additional Details

The 2SCR513P GZET100 has a collector-emitter voltage (VCEO) of 50V and a collector current (IC) of 1A. Its transition frequency (fT) is typically 200 MHz, enabling it to perform well in high-frequency circuits. The low saturation voltage minimizes power dissipation, contributing to improved energy efficiency. The transistor is housed in a small surface-mount package, which allows for high-density circuit designs. The Pb-free construction complies with RoHS standards, making it suitable for environmentally conscious applications. This transistor is particularly well-suited for applications requiring high-speed switching and amplification. Its robust design and excellent electrical characteristics ensure reliable performance in diverse electronic systems. The 2SCR513P GZET100 contributes to the overall efficiency and reliability of the circuits it is used in, making it a valuable component in various applications.