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2SC5826

Part No 2SC5826
Manufacturer Rohm Semiconductor
Catalog Hard To Find
Description Power transistor (60V, 3A)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Rohm Semiconductor
Win Source Part Number 1126032-2SC5826
Manufacturer Homepage www.rohm.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SC5826 CAD Model

Description

The 2SC5826 is an NPN epitaxial silicon transistor manufactured by Rohm Semiconductor. It's designed for high-frequency amplification and oscillation applications, commonly used in RF (Radio Frequency) circuits. It offers excellent high-frequency characteristics, making it suitable for use in various communication and signal processing systems.

Applications:

  • RF Amplifiers: Used as a small signal amplifier in radio frequency circuits.
  • Oscillators: Employed in oscillator circuits for signal generation.
  • Mixers: Used as a mixer in frequency conversion stages of communication systems.
  • High-Frequency Switching: Suitable for high-frequency switching applications.

Features:

  • NPN Epitaxial Silicon Transistor: Provides stable and reliable performance.
  • High Transition Frequency (fT): Enables high-frequency amplification and oscillation.
  • Low Noise Figure: Minimizes noise in RF circuits.
  • Small Package Size: Allows for high-density circuit designs.
  • High Power Gain: Provides efficient signal amplification.

Benefits:

  • Enhanced RF Performance: High transition frequency ensures excellent performance in RF circuits.
  • Improved Signal Quality: Low noise figure contributes to improved signal quality in communication systems.
  • Versatile Application: Suitable for a wide range of high-frequency amplification and oscillation applications.
  • Compact Design: Small package size enables integration in space-constrained circuits.
  • Reliable Operation: NPN epitaxial silicon construction ensures stable and reliable performance.

Additional Details:

The 2SC5826 transistor is characterized by its collector-emitter voltage (VCEO), which specifies the maximum voltage that can be applied between the collector and emitter. Its collector current (IC) rating indicates the maximum current that can flow through the collector. The transition frequency (fT) is a key parameter that determines the transistor's ability to amplify high-frequency signals. The noise figure (NF) specifies the amount of noise added by the transistor to the signal. The device is typically available in a small surface-mount package, facilitating automated assembly processes. The power dissipation rating must be considered to ensure safe and reliable operation.

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