Applications

• High-frequency amplifiers
• Oscillators
• RF Transmitters
• Mixer circuits
• Local Oscillators in communication devices

Features

• NPN Epitaxial Planar Transistor
• High Transition Frequency (fT)
• Low Noise Figure
• Excellent power gain
• Small Package size

Benefits

• Enables high-performance amplification at high frequencies.
• Reduces signal noise, enhancing signal clarity.
• Facilitates efficient power transfer in RF circuits.
• Allows for compact circuit design due to its small package.
• Improved Signal Sensitivity in Receiver application

Technical Specifications (Typical)

While specific values may vary, the 2SC5734K typically features:

• Collector-Base Voltage (VCBO): 20 V
• Collector-Emitter Voltage (VCEO): 12 V
• Emitter-Base Voltage (VEBO): 3 V
• Collector Current (IC): 50 mA
• Power Dissipation (PC): 200 mW
• Transition Frequency (fT): 7 GHz

The 2SC5734K is commonly used in communication devices where high-frequency performance and low noise are crucial. Its characteristics make it suitable for various RF and microwave applications, ensuring optimal signal amplification and oscillation.