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2SC3415S-P

Part No 2SC3415S-P
Manufacturer Rohm Semiconductor
Catalog Electronic Wholesale
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 06+
Reference case TO-92S
Manufacturer Rohm Semiconductor
Manufacturer Homepage www.rohm.com
Win Source Part Number 751190-2SC3415S-P
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SC3415S-P CAD Model

Description

The 2SC3415S-P is a silicon NPN epitaxial planar transistor manufactured by Rohm Semiconductor. It is designed for low noise amplifier applications in the VHF and UHF bands. Its key characteristic is its low noise figure and high gain, making it suitable for sensitive receiver front-ends and high-performance amplification circuits.

Applications:

  • Low-noise amplifiers (LNA): Used in VHF/UHF receivers to amplify weak signals with minimal added noise.
  • RF front-ends: Employed in radio receivers, televisions, and communication devices to boost the input signal.
  • Oscillators: Can be used in oscillator circuits for generating radio frequencies.
  • Mixers: Functions as a mixer in frequency conversion circuits.
  • High-frequency amplifiers: Used in various high-frequency amplification stages.

Features:

  • Low Noise Figure: Excellent noise performance for sensitive receiver applications.
  • High Gain: Provides significant signal amplification.
  • High Transition Frequency (fT): Suitable for high-frequency operation.
  • Small Package: Allows for compact circuit designs.
  • NPN Epitaxial Planar Transistor: Offers reliable and consistent performance.

Benefits:

  • Improved Receiver Sensitivity: Low noise figure enhances the ability to detect weak signals.
  • Increased Signal Strength: High gain boosts the signal level for improved processing.
  • Efficient High-Frequency Operation: High transition frequency ensures optimal performance at VHF and UHF frequencies.
  • Compact Design: Small package minimizes board space requirements.
  • Reliable Performance: Rohm Semiconductor's quality ensures consistent and stable operation.

Additional Details:

The 2SC3415S-P typically features a collector-emitter voltage (VCEO) of 12V, a collector current (IC) of 30mA, and a power dissipation (PC) of 200mW. Its noise figure is typically around 1.2dB at 200MHz. The transition frequency (fT) is typically around 6.5 GHz. The transistor is housed in a small surface-mount package. The 'S' suffix usually indicates a specific packaging or electrical characteristic variant. Always refer to the Rohm Semiconductor datasheet for precise specifications and application guidelines for the 2SC3415S-P transistor.

This transistor is particularly useful in applications where minimizing noise is critical for optimal signal reception and processing.

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