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Same model may have multiple batches, images only for reference.
RJH60M1DPP-M0#T2 Real Image
Same model may have multiple batches, images only for reference.

RJH60M1DPP-M0#T2

Part No RJH60M1DPP-M0#T2
Manufacturer Renesas Electronics America
Catalog IGBTs - Single
Description IGBT 600V 16A 30W TO-220FL / IGBT Trench 600 V 16 A 30 W Through Hole TO-220FL
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Renesas Electronics America Inc
Package Tube
Product Status Obsolete
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 16 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 8A
Power - Max 30 W
Switching Energy 80µJ (on), 90µJ (off)
Input Type Standard
Gate Charge 20.5 nC
Td (on/off) @ 25°C 30ns/55ns
Test Condition 300V, 8A, 5Ohm, 15V
Reverse Recovery Time (trr) 75 ns
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220FL
Base Product Number RJH60M
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Other Names RJH60M1DPPM0T2
Standard Package 1
Win Source Part Number 1183678-RJH60M1DPP-M0#T2
Ultra Librarian 3D Model Ultra Librarian RJH60M1DPP-M0#T2 CAD Model

Description

The Renesas Electronics America RJH60M1DPP-M0#T2 is a single IGBT transistor that is part of the Discrete Semiconductor Products category.

  • Power Capacity: 30 W
  • Reverse Recovery Time: 75 ns
  • IGBT Type: Trench
  • Voltage: 600 V
  • Current Collector: 16 A
  • Switching Energy: 80μJ (on) and 90μJ (off)
  • Input Type: Standard
  • Gate Charge: 20.5 nC
  • Mounting: Through hole
  • Package/Case: TO-220-3 full pack
  • Supplier Device Package: TO-220FL
  • Temperature Range: 150°C (TJ)

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