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RJH60D7DPK-00#T0

Part No RJH60D7DPK-00#T0
Manufacturer Renesas Electronics America
Catalog IGBTs - Single
Description IGBT 600V 90A 300W TO3P
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Active
IGBT Type Trench
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 90A
Collector-emitter saturation voltage(Max) 2.2V @ 15V, 50A
Maximum Power Dissipation 300W
Total Switching Energy(Ets) 1.1mJ (on), 600μJ (off)
Input Type Standard
Gate Charge 130nC
Turn-on and Turn-off delay time 60ns/190ns
Testing Conditions 300V, 50A, 5 Ohm, 15V
Reverse Recovery Time (trr) 100ns
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Win Source Part Number 1092261-RJH60D7DPK-00#T0
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RJH60D7DPK-00#T0 CAD Model

Description

The Renesas Electronics America RJH60D7DPK-00#T0 is an insulated gate bipolar transistor (IGBT) that offers a high-performance solution for various applications.

  • Manufacturer: Renesas Electronics America
  • Type: Insulated Gate Bipolar Transistor (IGBT)
  • Popularity: Medium
  • Supply and Demand Status: Balanced
  • Applications: Power supplies and motor control systems

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