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R2J20657BNP

Part No R2J20657BNP
Manufacturer Renesas Electronics America
Catalog PMIC - Gate Drivers
Description Integrated Driver - MOS FET (DrMOS)
Sample
Rohs State rohs
ECAD Module
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Manufacturer Renesas Electronics America
Win Source Part Number 1241500-R2J20657BNP
Manufacturer Homepage www.renesas.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian R2J20657BNP CAD Model

Description

The R2J20657BNP is a power MOSFET driver IC manufactured by Renesas Electronics America. It's designed to drive power MOSFETs and IGBTs in a variety of applications, offering high-speed switching and robust protection features. This driver is suitable for use in systems requiring efficient and reliable power control.

Applications:

  • Motor Control: Driving MOSFETs in motor control circuits for appliances and industrial equipment.
  • Power Supplies: Used in AC-DC and DC-DC power supplies for driving the switching transistors.
  • Inverters: Driving power MOSFETs or IGBTs in inverter applications for solar power and UPS systems.
  • Lighting Systems: Controlling power MOSFETs in LED lighting systems.
  • Welding Machines: Driving MOSFETs/IGBTs in welding equipment for power control.

Features:

  • High-Speed Switching: Enables fast turn-on and turn-off times for efficient power conversion.
  • Under-Voltage Lockout (UVLO): Protects the MOSFET/IGBT from operating with insufficient gate voltage.
  • Over-Current Protection (OCP): Shuts down the driver in case of excessive current to prevent damage.
  • Short-Circuit Protection (SCP): Provides rapid shutdown in the event of a short circuit.
  • Bootstrap Circuit: Integrated bootstrap diode and capacitor for high-side driving.

Benefits:

  • Improved Efficiency: High-speed switching minimizes power losses.
  • Enhanced Reliability: Protection features prevent damage to the MOSFET/IGBT and driver.
  • Simplified Design: Integrated features reduce external component count.
  • Reduced System Cost: Integration and protection features contribute to overall cost savings.
  • Robust Performance: Reliable operation in harsh environments.

Additional Details:

The R2J20657BNP typically operates with a supply voltage range suitable for driving power MOSFETs or IGBTs. The specific voltage range and output current capabilities should be verified in the datasheet. The IC's propagation delay is a key parameter influencing switching performance. Thermal management is also important to ensure the driver operates within its specified temperature range. It's crucial to consult the datasheet for detailed electrical characteristics, timing diagrams, and application recommendations. The driver is designed to interface with microcontrollers or other control circuitry, receiving control signals and generating appropriate gate drive signals for the power devices. The device also includes dead-time control to prevent shoot-through in bridge configurations. The R2J20657BNP is used for applications that need efficient control of power switching devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $42.0937 $84.1874
4+ $34.5378 $138.1512
6+ $33.4590 $200.7540
8+ $32.3801 $259.0408
11+ $31.3000 $344.3000
14+ $28.0620 $392.8680
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,500 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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