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HAT2266HWS-E

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Part No	HAT2266HWS-E
Manufacturer	Renesas Electronics America
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 60V 30A 5LFPAK / N-Channel 60 V 30A (Ta) 23W (Tc) Surface Mount LFPAK
Sample
Rohs State	Need to verify
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Renesas Electronics America Inc
Package	Tape & Reel (TR)
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3600 pF @ 10 V
Power Dissipation (Max)	23W (Tc)
Temperature Range - Operating	150°C
Mounting	SMD (SMT)
Supplier Device Package	LFPAK
Package / Case	SC-100, SOT-669
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	2,500
Win Source Part Number	1015161-HAT2266HWS-E
Ultra Librarian 3D Model	Ultra Librarian HAT2266HWS-E CAD Model

Alternative Products

Description

The Renesas Electronics America HAT2266HWS-E is a MOSFET transistor that falls under the category of Discrete Semiconductor Products.

Mounting Technology: SMD (SMT)
Package: SC-100, SOT-669
Drain to Source Voltage (Vdss): 60 V
Continuous Drain Current (Id): 30A (Ta) @ 25°C
Rds On: 12mOhm @ 15A, 10V
Vgs(th): 2.5V @ 1mA
Power Dissipation: 23W (Tc)
Gate Charge (Qg): 25 nC @ 4.5 V
Obsolete: Yes
Win Source Part Number: 1015161-HAT2266HWS-E

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