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Same model may have multiple batches, images only for reference.
FN4L4M-T1B-A
Same model may have multiple batches, images only for reference.

FN4L4M-T1B-A

Part No FN4L4M-T1B-A
Manufacturer Renesas Electronics America
Catalog Transistors (BJT) - Single, Pre - Biased
Description PROGRAM ADAPTER / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 200 mW
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Renesas Electronics America Inc
Package Box
Product Status Obsolete
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 22 Ohms
Resistor - Emitter Base (R2) 22 Ohms
DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 200mV @ 250µ, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Power - Max 200 mW
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 1
Win Source Part Number 1059535-FN4L4M-T1B-A
Ultra Librarian 3D Model Ultra Librarian FN4L4M-T1B-A CAD Model

Description

The Renesas Electronics America Inc 1059535-FN4L4M-T1B-A is an NPN pre-biased transistor.

  • Maximum Power: 200 mW
  • Maximum Collector Current: 100 mA
  • Voltage Breakdown: 50 V
  • DC Current Gain: 85 @ 5mA and 5V
  • Resistor (Base): 22 Ohms
  • Resistor (Emitter Base): 22 Ohms
  • Vce Saturation: 200mV @ 250µ, 5mA
  • Current Collector Cutoff: 100nA (ICBO)
  • Package: box
  • Standard Package: 1
  • Status: This product is obsolete.

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